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| D G S TO-264 ARF466A ARF466B Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 200V 300W 45MHz The ARF466A and ARF466B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. They have been optimized for both linear and high efficiency classes of operation. * Specified 150 Volt, 40.68 MHz Characteristics: * Output Power = 300 Watts. * Gain = 16dB (Class AB) * Efficiency = 75% (Class C) MAXIMUM RATINGS Symbol VDSS VDGO ID VGS PD RJC TJ,TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25C Gate-Source Voltage Total Power Dissipation @ TC = 25C Junction to Case * Low Cost Common Source RF Package. * Low Vth thermal coefficient. * Low Thermal Resistance. * Optimized SOA for Superior Ruggedness. All Ratings: TC = 25C unless otherwise specified. ARF466A_B UNIT Volts Amps Volts Watts C/W C 1000 1000 13 30 357 0.35 -55 to 150 300 Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(ON) IDSS IGSS g fs VGS(TH) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 A) Drain-Source On-State Resistance 1 MIN TYP MAX UNIT Volts 1000 0.90 25 250 100 3.3 2 7 9 4 (VGS = 10V, ID = 6.5A) ohms A nA mhos Volts 8-2005 050-4925 Rev C Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 6.5A) Gate Threshold Voltage (VDS = VGS, ID = 1mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 150V f = 1 MHz VGS = 15V VDD = 500 V ID = 13A @ 25C RG = 1.6 MIN TYP ARF466A_B MAX UNIT 2000 165 75 12 10 43 10 ns pF FUNCTIONAL CHARACTERISTICS Symbol GPS Characteristic Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 10:1 Test Conditions f = 40.68 MHz VGS = 2.5V VDD = 150V Pout = 300W MIN TYP MAX UNIT dB % 14 70 16 75 No Degradation in Output Power 1 Pulse Test: Pulse width < 380S, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. 30 25 20 GAIN (dB) 10,000 Class C VDD = 150V Pout = 150W CAPACITANCE (pf) Ciss 1000 500 15 10 5 0 30 Coss 100 50 Crss 60 75 90 105 FREQUENCY (MHz) Figure 1, Typical Gain vs Frequency 45 120 10 .1 1 10 100 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 20 18 ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 52 OPERATION HERE LIMITED BY RDS (ON) 16 14 12 10 8 6 4 2 0 100uS 10 5 1mS 1 .5 TC =+25C TJ =+150C SINGLE PULSE TJ = -55C 8-2005 10mS 100mS TJ = -55C 050-4925 Rev C TJ = +25C TJ = +125C 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Transfer Characteristics .1 1 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Typical Maximum Safe Operating Area TYPICAL PERFORMANCE CURVES 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 -50 ID, DRAIN CURRENT (AMPERES) 25 VGS=15 & 10V 20 8V 15 6V 5.5V 5V 5 4.5V 4V ARF466A_B VGS(th), THRESHOLD VOLTAGE (NORMALIZED) 10 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) Figure 5, Typical Threshold Voltage vs Temperature -25 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 6, Typical Output Characteristics 0.40 , THERMAL IMPEDANCE (C/W) 0.35 0.9 0.30 0.25 0.20 0.15 0.10 0.05 0 10-5 0.3 0.7 0.5 Note: PDM t1 t2 JC 0.1 0.05 10-4 SINGLE PULSE Duty Factor D = t1/t 2 Peak TJ = PDM x ZJC + TC Z 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 7a, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION RC MODEL Junction temp (C) 0.113 C/W Power (watts) 0.236 C/W Case temperature (C) 0.147 F 0.0130 F Figure 7b, TRANSIENT THERMAL IMPEDANCE MODEL Table 1 - Typical Class AB Large Signal Input - Output Impedance Freq. (MHz) 2.0 13.5 27.1 40.7 65 ZIN () 17.9 - j 11.2 1.1 - j 4.9 .25 - j 1.5 .15 - j 0.9 .31 + j 2.0 ZOL () 30 - j 1.7 25.7 - j 9.8 18 - j 13.3 12 - j 12.6 6.2 - j 8.9 IDQ = 100mA ZIN - Gate shunted with 25 ZOL - Conjugate of optimum load for 300W output at Vdd = 150V 050-4925 Rev C 8-2005 ARF466A_B L4 Bias + 0-12V RF Input R1 R2 C6 L1 TL1 C1 DUT R3 L3 C9 C2 L2 C4 C5 C7 C8 + 150V RF Output C3 40.68 MHz Test Circuit C1 -- 2200pF ATC 700B C2-C5 -- Arco 465 Mica trimmer C6-C8 -- .1F 500V ceramic chip C9 -- 3x 2200 pF 500V chips COG L1 -- 4t #22 AWG .25"ID .25 "L ~87nH L2 -- 5t #16 AWG .312" ID .35"L ~176nH L3 -- 10t #24 AWG .25"ID ~.5H L4 -- VK200-4B ferrite choke 3H R1- R3 -- 1kW 0.5 Carbon TL1 -- 38 t-line .175 x 1 in long C1 .45" from gate pin. DUT = ARF466A/B 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) TO-264 (L) Package Outline 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244) Dimensions in Millimeters and (Inches) NOTE: These two parts comprise a symmetric pair of RF power transistors and meet the same electrical specifications. The device pin-outs are the mirror image of each other to allow ease of use as a push-pull pair. Drain 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) 8-2005 Device ARF - A ARF - B Gate Drain Source Source Drain Gate 050-4925 Rev C 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. |
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